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In addition, Kyma has successfully developed a highly doped n+ type gallium nitride substrate wafer with an n-type carrier concentration of 6 Ì1018 cm-3 and a corresponding resistivity of only 0.005 ohm cm. The n-type GaN products that were previously sold will be labeled as n-types in the future.
For many semiconductor materials and device research, as a better initial growth material, n+ type gallium nitride is more advantageous than n-type gallium nitride, and it will be used by a conductive substrate with high electron concentration. The performance and service life of power electronic devices and optoelectronic devices are greatly improved. In vertical power electronic devices, n+ type gallium nitride can obtain ultra-low resistance and also reduce parasitic resistance; in terms of optoelectronic devices such as LEDs. The n+ type gallium nitride can achieve low vertical resistance and effectively reduce the occurrence of current crowding effects.
It is understood that the market for nitride semiconductor devices is expected to exceed 90 billion US dollars, of which more than 60 billion US dollars in the field of visible light applications, more than 30 billion US dollars in the application of power microelectronic devices, the market prospects are broad. 
Kyma Corporation of the United States introduces n+ type gallium nitride bulk single crystal substrate and wafer
[High-tech LED News] Recently, Kyma, a gallium nitride and aluminum nitride crystal material company in the United States, has introduced a highly doped n+ type gallium nitride bulk single crystal substrate with dimensions of 10 Ì10 mm-2 and 18 Ì18 mm- 2, the resistivity is less than 0.02 ohm cm, two orders of magnitude lower than the previous n-type GaN substrate. The conductivity is greatly improved, and Kyma is developing a 2-inch diameter GaN substrate. The next step is to enter mass production.