Abstract: This paper summarizes the failure modes of four IGBTs and their sub-devices through case and experiment: MOS gate breakdown, IGBT-MOS threshold voltage drift, accumulated damage of IGBT finite continuous short-circuit pulse shock and high-voltage npn tube for electrostatic protection The silicon melts. Keywords: gate breakdown threshold voltage drift accumulation damage silicon melting 1 Introduction IGBTs and their derivatives, such as IGCT, are hybrid semiconductor power devices with MOS and bipolar integration. Therefore, the failure mode of the IGBT has both its sub-device MOS and bipolar-specific failure modes, as well as a hybrid-specific failure mode. MOS is a static electrode sensitive device. Therefore, IGBT is also a static electrode sensitive device, and its sub-devices should also include electrostatic discharge (SED) protection devices. It has been reported that failures caused by electrostatic discharge and related causes account for a large proportion of failed semiconductor devices. For example, in the automotive industry where failure is required to return the product, the failure caused by electrostatic discharge accounts for about 30%. This article outlines four failure modes for IGBTs and their sub-devices through case studies and experiments: (1) MOS gate breakdown; (2) IGBT - MOS threshold voltage drift; (3) Cumulative damage of a limited number of consecutive short-circuit pulse impulses during the lifetime of the IGBT; (4) Silicon melting of high voltage npn tube for electrostatic discharge protection. 2, MOS gate breakdown The cross section and equivalent circuit of the IGBT device are shown in Figure 1. 32mm Push Button,Plastic Push Button,32mm Push Button,Wireless Push Button Guangzhou Ruihong Electronic Technology CO.,Ltd , https://www.callegame.com